Method of filling gaps with carbon and nitrogen doped film

ABSTRACT

A method includes etching a semiconductor substrate to form a trench, and depositing a dielectric layer using an Atomic Layer Deposition (ALD) cycle. The dielectric layer extends into the trench. The ALD cycle includes pulsing Hexachlorodisilane (HCD) to the semiconductor substrate, purging the HCD, pulsing triethylamine to the semiconductor substrate, and purging the triethylamine. An anneal process is then performed on the dielectric layer.

PRIORITY CLAIM AND CROSS-REFERENCE

This application claims the benefit of the following provisionally filedU.S. Patent application: Application Ser. No. 62/770,424, filed Nov. 21,2018, and entitled “Isolation Region with Good Oxidation Resistance andMethod Forming Same;” which application is hereby incorporated herein byreference.

BACKGROUND

With the increasing down-scaling of integrated circuits and theincreasingly demanding requirements to the speed of integrated circuits,transistors need to have higher drive currents with increasingly smallerdimensions. Fin Field-Effect Transistors (FinFET) were thus developed.The FinFETs include vertical semiconductor fins above a substrate. Thesemiconductor fins are used to form source and drain regions, and toform channel regions between the source and drain regions. ShallowTrench Isolation (STI) regions are formed to define the semiconductorfins. The FinFETs also include gate stacks, which are formed on thesidewalls and the top surfaces of the semiconductor fins.

In the formation of the STI regions and the formation of the FinFETs,STI regions are first formed, for example, using flowable oxide,followed by a post treatment using either Ultra-Violet (UV) curing orthermal oxidation in an oxygen-containing environment. The respectivewafer is then annealed.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1, 2A, 2B, and 3 through 9 are cross-sectional views ofintermediate stages in the formation of Shallow Trench Isolation (STI)regions and Fin Field-Effect Transistors (FinFETs) in accordance withsome embodiments.

FIG. 10 illustrates an Atomic Layer Deposition (ALD) cycle in theformation of a SiNOCH film in accordance with some embodiments.

FIGS. 11A and 11B illustrate a chemical structure and a symbol,respectively, of hexachlorodisilane and triethylamine, respectively, inaccordance with some embodiments.

FIG. 12 illustrates a schematic chemical structure of a SiNOCH film inaccordance with some embodiments.

FIG. 13 schematically illustrates a seam separating two portions of aSiNOCH film in accordance with some embodiments.

FIG. 14 illustrates a schematic chemical structure after a wet annealprocess is performed on a SiNOCH film in accordance with someembodiments.

FIGS. 15 and 16 schematically illustrate the bonds at a seam after alow-temperature wet anneal process and a high-temperature wet annealprocess, respectively, in accordance with some embodiments.

FIG. 17 illustrates a schematic chemical structure of silicon oxideafter a dry anneal process in accordance with some embodiments.

FIG. 18 schematically illustrates the cross-link at a seam in accordancewith some embodiments.

FIG. 19 illustrates the effect of converting Si—C—N bonds to Si—OH bondsthrough a low-temperature wet anneal process in accordance with someembodiments.

FIG. 20 illustrates the carbon concentration as a function of depthswhen different low-temperatures are used for the wet anneal processes inaccordance with some embodiments.

FIG. 21 illustrates the effect of wet anneal conditions on nitrogenconcentrations, carbon concentrations, and expansion rates in adeposited dielectric film in accordance with some embodiments.

FIG. 22 illustrates a process flow for forming STI regions and a FinFETin accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “underlying,” “below,”“lower,” “overlying,” “upper” and the like, may be used herein for easeof description to describe one element or feature's relationship toanother element(s) or feature(s) as illustrated in the figures. Thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. The apparatus may be otherwiseoriented (rotated 90 degrees or at other orientations) and the spatiallyrelative descriptors used herein may likewise be interpretedaccordingly.

Shallow Trench Isolation (STI) regions, Fin Field-Effect Transistors(FinFETs), and the methods of forming the same are provided. Theintermediate stages in the formation of the STI regions and the FinFETsare illustrated in accordance with some embodiments. Some variations ofsome embodiments are discussed. Throughout the various views andillustrative embodiments, like reference numbers are used to designatelike elements. In accordance with some embodiments of the presentdisclosure, STI regions are formed by forming SiNOCH films, and thenperforming anneal processes to convert the Si—N—C bonds in the SiNOCHfilms to Si—OH bonds, and then to Si—O—Si bonds. Through theseprocesses, the resulting STI regions are free or substantially free fromvoids and seams.

Embodiments will be described with respect to a specific context, namelya STI formation process by forming a conformal STI layer. The concept ofthe discussed embodiments may also be applied to the structure and theprocessing of other structures including, and not limited to, any othergap-filling processes in which silicon oxide is to be filled.Embodiments discussed herein are to provide examples to enable making orusing the subject matter of this disclosure, and a person havingordinary skill in the art will readily understand modifications that canbe made while remaining within contemplated scopes of differentembodiments. Like reference numbers and characters in the figures belowrefer to like components. Although method embodiments may be discussedas being performed in a particular order, other method embodiments maybe performed in any logical order.

FIGS. 1, 2A, 2B, and 3 through 9 illustrate the cross-sectional views ofintermediate stages in the formation of STI regions and parts of aFinFET in accordance with some embodiments of the present disclosure.The corresponding processes are also reflected schematically in theprocess flow 200 shown in FIG. 22.

In FIG. 1, substrate 20 is provided. The substrate 20 may be asemiconductor substrate, such as a bulk semiconductor substrate, aSemiconductor-On-Insulator (SOI) substrate, or the like, which may bedoped (e.g., with a p-type or an n-type dopant) or undoped. Thesemiconductor substrate 20 may be a part of wafer 10, such as a siliconwafer. Generally, an SOI substrate is a layer of a semiconductormaterial formed on an insulator layer. The insulator layer may be, forexample, a Buried Oxide (BOX) layer, a silicon oxide layer, or the like.The insulator layer is provided on a substrate, typically a silicon orglass substrate. Other substrates such as a multi-layered or gradientsubstrate may also be used. In some embodiments, the semiconductormaterial of semiconductor substrate 20 may include silicon; germanium; acompound semiconductor including silicon carbide, gallium arsenic,gallium phosphide, indium phosphide, indium arsenide, and/or indiumantimonide; an alloy semiconductor including SiGe, GaAsP, AlInAs,AlGaAs, GaInAs, GaInP, and/or GaInAsP; or combinations thereof.

Further referring to FIG. 1, well region 22 is formed in substrate 20.The respective process is illustrated as process 202 in the process flow200 shown in FIG. 22. In accordance with some embodiments of the presentdisclosure, well region 22 is a p-type well region formed throughimplanting a p-type impurity, which may be boron, indium, or the like,into substrate 20. In accordance with other embodiments of the presentdisclosure, well region 22 is an n-type well region formed throughimplanting an n-type impurity, which may be phosphorus, arsenic,antimony, or the like, into substrate 20. The resulting well region 22may extend to the top surface of substrate 20. The n-type or p-typeimpurity concentration may be equal to or less than 10¹⁸ cm⁻³, such asin the range between about 10¹⁷ cm⁻³ and about 10¹⁸ cm⁻³.

Referring to FIG. 2A, pad oxide layer 28 and hard mask layer 30 areformed on semiconductor substrate 20. Pad oxide layer 28 may be a thinfilm formed of silicon oxide. In accordance with some embodiments of thepresent disclosure, pad oxide layer 28 is formed in a thermal oxidationprocess, wherein a top surface layer of semiconductor substrate 20 isoxidized. Pad oxide layer 28 acts as an adhesion layer betweensemiconductor substrate 20 and hard mask layer 30. Pad oxide layer 28may also act as an etch stop layer for etching hard mask layer 30. Inaccordance with some embodiments of the present disclosure, hard masklayer 30 is formed of silicon nitride, for example, using Low-PressureChemical Vapor Deposition (LPCVD). In accordance with other embodimentsof the present disclosure, hard mask layer 30 is formed by thermalnitridation of silicon, or Plasma Enhanced Chemical Vapor Deposition(PECVD). A patterned photo resist (not shown) is formed over hard masklayer 30. Hard mask layer 30 and pad oxide layer 28 are then patternedusing the patterned photo resist as an etching mask to form thepatterned hard masks 30 as shown in FIG. 2A.

Next, the patterned hard mask layer 30 is used as an etching mask toetch pad oxide layer 28 and substrate 20, resulting in trenches 32 insubstrate 20, as also shown in FIG. 2A. The respective process isillustrated as process 204 in the process flow 200 shown in FIG. 22. Inaccordance with some embodiments of the present disclosure, trenches 32are formed as trench strips with their lengthwise directions parallel toeach other. The portions of semiconductor substrate 20 between trenches32 are referred to as semiconductor strips 26 hereinafter.

FIG. 2B illustrates a cross-sectional view of the referencecross-section 2B-2B in FIG. 2A. for the simplicity in discussion, twosemiconductor strips 26 are illustrated, with the trench therebetweenreferred to as narrow trench 32A, while there may be a group of closelylocated semiconductor strips 26 with narrow trenches 32A separating themfrom each other. In accordance with some embodiments, narrow trenches32A have small width W1, which may be smaller than about 250 Å, or inthe range between about 100 Å and about 250 Å. There may also be widetrenches, for example, on the opposite outer sides of the group of theclosely-located semiconductor strips 26. The width W2 of wide trenches32B is greater than width W1, for example, with ratio W2/W1 beinggreater than about 2.0. Width W2 may also be greater than about 150 Å.Trenches 32A and 32B are collectively referred to as trenches 32. Inaccordance with some embodiments of the present disclosure, the depth D1of narrow trenches 32A is smaller than the depth D2 of wide trenches32B.

FIGS. 3 and 4 illustrate an intermediate stage in the growth/depositionof dielectric layer 34. The respective process is illustrated as process206 in the process flow 200 shown in FIG. 22. In the beginning of thedeposition process, wafer 10 is placed in an Atomic Layer Deposition(ALD) chamber (not shown), in which ALD cycles are performed to growdielectric layer 34 conformally. FIG. 3 illustrates the initial growthof dielectric layer 34, which is conformal, and the thickness T1 of thehorizontal portions of dielectric layer 34 is equal to the thickness T2of the vertical portions of dielectric layer 34.

FIG. 10 schematically illustrates the intermediate chemical structuresof dielectric layer 34 during its growth. The intermediate structuresshown in FIG. 10 are identified using reference numerals 112, 114, 116,and 118 to distinguish the structures generated by different stages fromeach other. Wafer 10 includes base layer 110, which may represent theexposed features including substrate 20, semiconductor strips 26, padlayer 28, and hard masks 30 in FIG. 3, providing they are exposed in thebeginning of the deposition process. The initial structure in FIG. 10 isreferred to as structure 112. In the illustrated example, base layer 110is shown as including silicon, which may be in the form of crystallinesilicon, amorphous silicon, polysilicon, or the silicon in a compound.In accordance with some embodiments of the present disclosure, due tothe formation of native oxide and the exposure to moisture, Si—OH bondsare formed at the surface of silicon-containing layer 110. Base layer110 may include other types of silicon-containing materials such assilicon oxide, silicon nitride, silicon oxy-carbide, silicon oxynitride,or the like. Dielectric layer 34 may also be deposited on othernon-silicon-containing layers such as pad layers 28 and hard masks 30,as shown in FIG. 3.

Referring to FIG. 10 again, in process 130, Hexachlorodisilane (HCD) isintroduced/pulsed into the ALD chamber, in which wafer 10 (FIG. 3) isplaced. The respective process is illustrated as process 208 in theprocess flow 200 shown in FIG. 22. HCD has the chemical formula of(SiCl₃)2. FIG. 11A illustrates a chemical formula of an HCD molecule inaccordance with some embodiments. The chemical formula shows that theHCD molecule includes chlorine atoms bonded to two silicon atoms. WhenHCD is pulsed into the ALD chamber, wafer 10 is heated, for example, toa temperature in the range between about 550° C. and about 670° C. TheOH bonds as shown in structure 112 are broken, and silicon atoms alongwith the chlorine atoms bonded to them are bonded to oxygen atoms toform O—Si—Cl bonds. The resulting structure is referred to as structure114. In accordance with some embodiments of the present disclosure, noplasma is turned on when HCD is introduced. The HCD gas may be kept inthe ALD chamber for a period of time between about 20 seconds and about25 seconds. The pressure of the ALD chamber may be in the range betweenabout 100 Pa and about 150 Pa in accordance with some embodiments.

Next, HCD is purged from the ALD chamber. The respective process is alsoillustrated as process 208 in the process flow 200 shown in FIG. 22. Inprocess 132, a process gas including a nitrogen atom bonded with alkylgroups may be pulsed into the ALD chamber. For example, triethylaminemay be pulsed. The respective process is illustrated as process 210 inthe process flow 200 shown in FIG. 22. Triethylamine may have a chemicalformula of N(CH₂CH₃)₃, which includes a nitrogen atom bonded to threeethyl groups (CH₂CH₃). FIG. 11B illustrates a chemical formula oftriethylamine in accordance with some embodiments. The chemical formulashows that triethylamine includes a nitrogen atom bonded to three ethylgroups, with each of the “<” symbols connected to the N atomrepresenting an ethyl group (CH₂CH₃, or a CH₂ molecule bonded with a CH₃molecule). With the introduction/pulsing of triethylamine, thetemperature of wafer 10 is also kept elevated, for example, in the rangebetween about 550° C. and about 670° C. The temperature may also be keptthe same as in the process for introducing HCD. In accordance with someembodiments of the present disclosure, no plasma is turned on whentriethylamine is introduced. During the pulsing of triethylamine, theALD chamber may have a pressure in the range between about 800 Pa andabout 1,000 Pa.

Structure 114 reacts with triethylamine. The resulting structure isreferred to as structure 116. The Si—Cl bonds in structure 114 arebroken, so that nitrogen atoms (for example, in triethylamine) may bebonded to silicon atoms. A silicon atom may be bonded to three nitrogenatoms, with each of the nitrogen atoms further bonded to two ethylgroups. In process 132, the triethylamine may be kept in the ALD chamberfor a period of time between about 5 seconds and about 15 seconds, andis then purged from the ALD chamber.

Next, as shown as process 134 in FIG. 10, oxygen (O₂) is pulsed into theALD chamber. The respective process is illustrated as process 212 in theprocess flow 200 shown in FIG. 22. During process 212, structure 116reacts with oxygen to generate structure 118. The alkyl groups such asthe ethyl groups in structure 116 help to convert the Si—N bonds intoSi—O bonds, for example, with the Si—N bonds in structure 116 beingbroken, and silicon atoms being bonded to oxygen atoms as the result ofprocess 134. Some of the nitrogen atoms along with their bonding ethylgroups may also remain to be bonded to silicon atoms. Some of oxygenatoms may be bonded to two silicon atoms to generate cross-links betweensome of the silicon atoms. In accordance with some embodiments of thepresent disclosure, no plasma is turned on when oxygen is introduced.During the pulsing of oxygen, the ALD chamber may have a pressure in therange between about 800 Pa and about 1,000 Pa. Oxygen may be kept in theALD chamber for a period of time between about 5 seconds and about 15seconds, and is then purged from the ALD chamber.

In above-discussed processes, the processes 130 and 132 in combinationmay be referred to as an ALD cycle 136, with ALD cycle 136 resulting inthe growth of an atomic layer comprising silicon atoms, and thecorresponding bonded nitrogen atoms and ethyl groups. Also, theprocesses 130, 132, and 134 in combination may also be referred to as anALD cycle 138, with ALD cycle 138 resulting in the growth of an atomiclayer comprising silicon atoms and the corresponding bonded nitrogenatoms and ethyl groups, and the bonding oxygen atoms. In accordance withsome embodiments, an atomic layer resulted from an ALD cycle 138 has athickness of about 1 Å.

After the process 134 is finished, the ALD cycle 138 including processes130, 132, and 134 are repeated, so that a plurality of atomic layers aredeposited to form dielectric layer 34, as shown in FIG. 4. In asubsequent ALD cycles, the Si—O bonds and the Si—N bonds formed in aprevious ALD cycle may be broken, and Si—Cl bonds may be formed due tothe pulsing of HCD. The Si—Cl bonds may then be replaced with the Si—Nbonds and the corresponding ethyl groups. O₂ may then be used to formSi—O bonds, which replace some Si—N bonds. FIG. 12 illustrates anadditional atomic layer as an example. It is appreciated that dependingon the desirable thickness of dielectric layer 34, there may be manyatomic layers. Dielectric layer 34, as deposited, is a SiNOCH layer.

The ALD cycle 138 is repeated until the resulting dielectric layer 34has a desirable thickness. For example, as shown in FIG. 4, the portionsof dielectric layer 34 grown from neighboring semiconductor strips 26are grown toward each other, and are eventually in contact with eachother to generate interface 36. It is appreciated that there may be aseam generated, which is also referred to as 36. There may also be somevoids 38 generated at the interface 36, which voids may be due to thesmall recesses on the sidewalls of semiconductor strips 26. It isappreciated that although the portions of dielectric layer 34 grown fromneighboring semiconductor strips 26 are in contact with each other, theyare merely in contact with each other, with no cross-link formedtherebetween. For example, FIG. 13 schematically illustrates theseam/interface 36 formed between the left-side portion of dielectriclayer 34 and the right-side portion of dielectric layer 34, with nocross-link formed between the boundary atoms of the left-side portionand the right-side portion.

In accordance with some embodiments of the present disclosure, after theALD cycles 138, the resulting dielectric layer 34 has a carbonpercentage in the range between about 1 percent and about 15 percent,and a nitrogen percentage in the range between about 5 percent and about20 percent. The majority of the rest elements in dielectric layer 34 aresilicon and oxygen, which may have an atomic ratio of silicon to oxygenbeing about 1.5:2 to about 1:2.5. The ratio which may be for example,around about 1:2.

After the deposition (the growth) of dielectric layer 34, an annealprocess is performed. The respective process is illustrated as process214 in the process flow 200 shown in FIG. 22. In accordance with someembodiments of the present disclosure, the anneal process includes alow-temperature wet anneal process (process 216), a high-temperature wetanneal process (process 218), and a dry anneal process (process 220).The low-temperature process and high-temperature wet anneal process maybe performed using steam (H₂O) as the process gas. The dry annealprocess may be performed using nitrogen (N₂), argon, or the like ascarrier gases. The anneal processes are discussed below referring toFIGS. 14 through 20.

In accordance with some embodiments of the present disclosure, thelow-temperature wet anneal process is first performed. The respectiveprocess is illustrated as process 216 in the process flow 200 shown inFIG. 22. The low-temperature wet anneal process is performed at arelatively low temperature in the range between about 300° C. and about450° C. The low-temperature wet anneal process may last for a period oftime in the range between about 3 hours and about 5 hours. The pressureduring the low-temperature anneal may be about 1 atmosphere. Thelow-temperature wet anneal process has two functions. The first functionis to make the water/steam (H₂O) molecules penetrate into dielectriclayer 34, as schematically illustrated in FIG. 15, wherein the soliddots represent the H₂O molecules. The second function is to partiallyconvert the Si—N—C bonds, Si—CH₃ bonds, and Si—N—Si bonds in dielectriclayer 34 into Si—OH bonds. The temperature is controlled to be highenough to incur at least partial conversion.

FIG. 21 illustrates some experiment results, wherein the X-axisrepresents the anneal conditions including annealing temperature andannealing time. The letter “C” of each X-axis value represents theannealing temperature in degrees centigrade, and the letter “M”represents the annealing time in minutes, while the letter “H”represents the annealing time in hours. For example, “W200C30M”represents the corresponding values are obtained when the wafer isannealed at 200° C. for 30 minutes. There are three Y-axes, representingnitrogen ([N]) atomic percentage, carbon ([C]) atomic percentage, andexpansion rate of the annealed dielectric layer. The results in FIG. 21indicate that before the anneal process (corresponding to the X-axisvalue “NA”), the carbon percentage and the nitrogen percentages arehigh. With the lasting of the anneal process and/or the adoption ofhigher temperatures, the carbon percentage and the nitrogen percentagesare reduced to certain levels such as less than 1 percent. This meansthat the original carbon and nitrogen atoms (as in FIG. 12) start to beconverted into OH, which is shown in FIG. 14. Also, as shown in FIG. 21,when the temperature is higher than 450° C., the expansion rate of thedielectric film may increase. Since the surface portion of dielectriclayer 34 expands earlier than the inner portion, the expansion of thesurface portion of dielectric layer may adversely prevent H₂O moleculesfrom penetrating into, and reaching, the inner portion of the dielectriclayer. Accordingly, to avoid the surface portion of dielectric layer 34from expanding pre-maturely, the low-temperature wet anneal process isperformed at a temperature (lower than about 450° C., for example) atwhich the dielectric layer 34 does not expand. On the other hand, toimprove the conversion efficiency and the steam penetration efficiency,the low-temperature wet anneal process is performed at a temperaturethat is not too low, and the temperature may be in the range betweenabout 300° C. and about 450° C.

FIGS. 19 and 20 illustrate the results measured from samples, and revealthat the low-temperature wet anneal process at 300° C. and 450° C. havesimilar results. FIG. 19 illustrates the etching rate (of dielectriclayer 34) as a function of the depth into dielectric layer 34. Theetching rate is an indication of the composition of dielectric layer 34,such as how many C and N atoms are replaced with OH groups. Values 310and 312 are the results of annealing at 300° C. for 4 hours. Values 314and 316 are the results of annealing at 450° C. for 4 hours. The samplesare also annealed at the same higher annealing temperature conditions(600° C. for 2 hours) and the same dry annealing temperature conditions(600° C. for 1 hour). FIG. 19 reveals that the although thelow-temperature wet anneal processes are performed at differenttemperatures, their etching rate at different depths of the samples aresimilar, indicating that the low-temperature wet anneal temperature of300° C. and 450° C. do not cause difference to the penetration of H₂Omolecules.

FIG. 20 illustrates the carbon concentration as a function of the depthinto dielectric layer 34. Again, line 318 is the result oflow-temperature wet anneal at 300° C. for 4 hours. Line 320 is theresults of low-temperature wet anneal at 450° C. for 4 hours. Thesamples corresponding to lines 318 and 320 are also annealed at the samehigher annealing temperature conditions (600° C. for 2 hours) and thesame dry annealing temperature conditions (600° C. for 1 hour). FIG. 20reveals that although the low-temperature wet anneal processes areperformed at different temperatures, the carbon percentage, which is theindication of the conversion rate (from C—N to OH) at different depthsof the samples, are similar. These results reveal that adopting 300° C.or 450° C. as the temperature of the low-temperature anneal process doesnot cause difference to the penetration of H₂O molecules.

After the low-temperature wet anneal process, a high-temperature wetanneal process is performed. The respective process is illustrated asprocess 218 in the process flow 200 shown in FIG. 22. Thehigh-temperature wet anneal process is performed at a relatively hightemperature in the range between about 450° C. and about 650° C. Thehigh-temperature wet anneal process may last for a period of time in therange between about 1.5 hours and about 2.5 hours. The pressure of thehigh-temperature anneal process may be about 1 atmosphere. Thetemperature is high enough to efficiently convert the Si—C—N bonds indielectric layer 34 into Si—OH bonds, as schematically illustrated inFIG. 16. On the other hand, the temperature cannot be too high to causethe excess oxidation of the semiconductor materials. For example, whensemiconductor strips 26 comprises SiGe, the temperature of thehigh-temperature anneal process should be lower than about 650° C.Otherwise, SiGe may be oxidized. Silicon may also be oxidized attemperatures higher than about 650° C., although at a lower rate.Accordingly, the temperature of the high-temperature wet anneal processmay be in the range between about 500° C. and about 650° C., or betweenabout 500° C. and about 600° C.

The high-temperature wet anneal process results in the Si—N bonds andSi—O bonds to be broken. The alkyl groups attached to the N atoms arealso broken off along with the nitrogen atoms. OH groups are attached tothe broken bonds. The resulting chemical structure may be schematicallyillustrated in FIG. 14. FIG. 16 illustrates the structure at theinterface 36 (also refer to FIG. 4). Si—OH bonds formed in the portionsof dielectric layer 34 on opposite sides of interface 36 are closelylocated, and the portions of dielectric layer 34 on opposite sides ofinterface 36 may contact with each other. However, no cross-link isformed. During the high-temperature wet anneal process, dielectric layer34 expands, and the expansion rate in the volume may be up to about 10percent. As a result of the expansion, the portions of dielectric layer34 on opposite sides of interface 36 are in tight contact with eachother, and seam 36 (FIGS. 4 and 15) and voids 38 (FIG. 4) may beeliminated. This enables the subsequent cross-linking process to bepossible.

After the high-temperature wet anneal process, a dry anneal process isperformed for cross-linking. The respective process is illustrated asprocess 220 in the process flow 200 shown in FIG. 22. An oxygen-freeprocess gas such as nitrogen (N₂), argon, or the like may be used as theprocess gases. The dry anneal temperature cannot be too high or too low.If the temperature is too low, the OH bonds may not be broken, and thecross-linking may not be achieved. If the temperature is too high, thesemiconductor (such as SiGe) may intermix with the surroundingmaterials. In accordance with some embodiments of the presentdisclosure, the dry anneal process is performed at a temperature in therange between about 550° C. and about 650° C. The dry anneal process maylast for a period of time in the range between about 0.5 hours and about1.5 hours. The pressure may be around 1 atmosphere. A carrier gas may beused to carry away the generated H₂O steam. The carrier gas may benitrogen, argon, or the like.

In the dry anneal process, the OH bonds and the Si—O bonds (FIGS. 14 and16) are broken, and the broken H and OH combine to form H₂O molecules,as shown in FIG. 18. The oxygen atoms, whose bonds become dangling dueto the loss of H atoms, may bond with Si to form silicon oxide (SiO₂).After the dry anneal process is finished, there may be small percentagesof carbon and nitrogen atoms left in the silicon oxide (dielectric layer34), with the atomic percentages of carbon and nitrogen being smallerthan about 1 percent, and possibly between about 0.5 percent and about1.0 percent. This is different from the STI regions formed usingconventional methods, in which carbon may not exist.

As shown in FIG. 18, the silicon atoms on opposite sides of thepreviously existed interface/seam 36 are cross-linked by oxygen atoms.Cross-links are thus formed between the portions of dielectric layer 34on opposite sides of interface 36. H₂O molecules, which are representedby the solid dots, are carried away. FIG. 5 illustrates the resultingstructure, in which the seam/interface formed in the deposition processhas been eliminated, and there may not be distinguishable interface anymore.

In accordance with some embodiments, narrow trenches 32A are fullyfilled in the preceding processes. Since the deposition of dielectriclayer 34 is performed using ALD, which is a conformal deposition method,the wide trenches 32B may not be fully filled when the depositionprocess is finished. Accordingly, as shown in FIG. 5, some portions ofwide trenches 32B are left unfilled. The portions of dielectric layer 34in wide trenches 32B are conformal.

Referring to FIG. 6, the remaining wide trenches 32B are filled withdielectric layer 40. The respective process is illustrated as process222 in the process flow 200 shown in FIG. 22. Dielectric layer 40 mayalso be a deposited silicon nitride layer, carbon-containing dielectric,or the like formed using, for example, ALD, High-Density Plasma ChemicalVapor Deposition (HDPCVD), or Chemical Vapor Deposition (CVD).Dielectric layer 40 may also be formed of SiOCN using Flowable ChemicalVapor Deposition (FCVD), spin-on coating, or the like. Dielectric layer40 is deposited to a level higher than the top surface of dielectriclayer 34.

Referring to FIG. 7, a planarization process such as a ChemicalMechanical Polish (CMP) process or a mechanical grinding process is thenperformed to remove excessing portions of the dielectric materials. Theremaining portions of the dielectric materials(s) are STI regions 42.The respective process is also illustrated as process 222 in the processflow 200 shown in FIG. 22. The planarization process may be performedusing hard masks 30 as a CMP stop layer. The STI regions 42 betweenclosely located semiconductor strips 26 may be formed of a homogeneousmaterial 34, which extends all the way to opposite semiconductor strips26. The STI regions formed in the wide trenches may include conformaldielectric layer 34 and dielectric region 40. Dielectric layer 34 willhave vertical portions on opposite sides of, and contacting oppositesidewalls of, dielectric region 42, although one vertical portion isshown.

Hard mask 30 and pad oxide layer 28 are then etched. As shown in FIG. 8,dielectric layer 34 is recessed, so that the top portions ofsemiconductor strips 26 protrude higher than the top surfaces 34A of theremaining portions of STI regions 42 to form protruding fins 44. Therespective process is illustrated as process 224 in the process flow 200shown in FIG. 22. The etching may be performed using a dry etchingprocess, for example, using HF₃ and NH₃ as the etching gases. Inaccordance with alternative embodiments of the present disclosure, therecessing of dielectric layer 34 is performed using a wet etch process.The etching chemical may include HF solution, for example.

In the recessing process, dielectric region 40 are not etched, resultingin dummy (dielectric) fins 46 to protrude higher than the top surfaces34A of the remaining portions of STI regions 42. Dummy dielectric fins46 are such named since features 46 protrude above the neighboringdielectric layer 34, hence forming fins, while these fins, unliketypical semiconductor fins that can be used for forming FinFETs, cannotbe used to form FinFETs. Due to the conformal deposition of dielectriclayer 34, the wide trenches 32B (FIG. 2B) are not fully filled when thenarrow trenches 32A are filled by dielectric layer 34. This makes thefilling of dielectric layer 40 possible, and makes the formation ofdummy fins 46 possible. The generation of the dummy fins helps toimprove the device performance of the FinFETs when the dimensions ofFinFETs are very small.

In subsequent formation processes, A FinFET 54 (FIG. 9) is formed basedon protruding semiconductor fins 44. FIG. 9 illustrates across-sectional view of protruding fins 44 and gate stack 52, whichextend on the sidewalls and top surfaces of protruding semiconductorfins 44 and dummy fins 46. An example formation process is discussedbriefly in subsequent paragraphs.

In accordance with some embodiments of the present disclosure, a dummygate stack (not shown) is formed extending on the sidewalls and topsurfaces of protruding semiconductor fins 44 and dummy fins 46. A gatespacer (not shown) is then formed on the sidewalls of the dummy gatestack. Source/drain regions (not shown) are then formed on the oppositesides of the dummy gate stack and the gate spacer, for example, byetching the portions of protruding semiconductor fins 44 not covered bythe dummy gate stack, and epitaxially growing the source/drain regions.Contact Etch Stop Layer (CESL) 56 and Inter-Layer Dielectric (ILD) 58are then formed to cover the source/drain regions and the dummy gatestack. The dummy gate stack is then etched to re-expose protrudingsemiconductor fins 44. Gate stack 52, which includes gate dielectric 48and gate electrode 50, are then formed in the recess left by the removeddummy gate stack.

The embodiments of the present disclosure have some advantageousfeatures. Conventional STI formation uses flowable CVD, which is unableto form conformal dielectric layers, and hence dummy dielectric finscannot be formed. In accordance with some embodiments of the presentdisclosure, an ALD process is used to form a carbon-and-nitrogen dopedfilm, which is then annealed to form a silicon oxide film. The seam andvoids that are generated during the ALD process is eliminated through asequence of a low-temperature wet anneal process, a high-temperature wetanneal process, and a dry anneal process.

In accordance with some embodiments of the present disclosure, a methodincludes etching a semiconductor substrate to form a trench; depositinga dielectric layer using an ALD cycle, wherein the dielectric layerextends into the trench, and wherein the ALD cycle comprises pulsing HCDto the semiconductor substrate; purging the HCD; pulsing triethylamineto the semiconductor substrate; and purging the triethylamine; andperforming an anneal process on the dielectric layer. In an embodiment,the ALD cycle further includes, after the triethylamine is purged,pulsing oxygen (O₂) to the semiconductor substrate; and purging theoxygen. In an embodiment, the method further comprises repeating the ALDcycle that comprising the pulsing oxygen. In an embodiment, the methodfurther comprises repeating the ALD cycle. In an embodiment, the annealprocess includes a low-temperature anneal process performed at a firsttemperature; a high-temperature anneal process performed at a secondtemperature higher than the first temperature; and a dry anneal processperformed at a third temperature higher than the first temperature. Inan embodiment, the low-temperature anneal process is performed at thefirst temperature in a range between about 300° C. and about 450° C. Inan embodiment, the high-temperature anneal process is performed at thesecond temperature in a range between about 500° C. and about 650° C. Inan embodiment, the dry anneal process is performed at the thirdtemperature in a range between about 500° C. and about 650° C.

In accordance with some embodiments of the present disclosure, a methodincludes depositing a dielectric layer on a semiconductor strip, whereinthe depositing the dielectric layer comprises a cycle, and the cyclecomprises: attaching silicon and chlorine atoms to oxygen atoms on thesemiconductor strip; replacing the chlorine atoms with nitrogen atomsand alkyl groups; and replacing first portions of the nitrogen atoms andalkyl groups with oxygen atoms; removing second portions of the nitrogenatoms and alkyl groups with OH bonds; and annealing the dielectric layerto form Si—O—Si bonds. In an embodiment, the cycle comprises an AtomicLayer Deposition (ALD) cycle, and the attaching silicon and chlorineatoms comprises pulsing HCD; and purging the HCD. In an embodiment, thecycle comprises an ALD cycle, and the replacing the chlorine atomsincludes pulsing triethylamine; and purging the triethylamine. In anembodiment, the cycle comprises an ALD cycle, and the replacing thefirst portions of the nitrogen atoms and alkyl groups includes pulsingoxygen (O₂); and purging the oxygen. In an embodiment, the annealing thedielectric layer comprises driving H₂O molecules into the dielectriclayer at a first temperature; replacing the nitrogen atoms and alkylgroups with oxygen atoms and OH molecules at a second temperature higherthan the first temperature; and forming the Si—O—Si bonds through a dryanneal process, wherein the dry anneal process is performed at a thirdtemperature higher than the first temperature. In an embodiment, thedielectric layer is formed in a trench, with the semiconductor stripbeing on a side of the trench, and the method further comprises: formingan additional dielectric region, wherein the semiconductor strip and theadditional dielectric region contact opposite sidewalls of a portion ofthe dielectric layer; etching back the portion of the dielectric layer,wherein a top portion of the semiconductor strip forms a semiconductorfin, and a top portion of the additional dielectric region forms a dummydielectric fin; and forming a gate stack extending on the semiconductorfin and the additional dielectric region.

In accordance with some embodiments of the present disclosure,integrated circuit structure includes a first semiconductor strip; adielectric layer comprising silicon oxide, with carbon doped in thesilicon oxide, wherein the dielectric layer comprises: a horizontalportion; and a vertical portion connected to an end of the horizontalportion, wherein the vertical portion contacts a sidewall of a lowerportion of the first semiconductor strip, wherein a top portion of thefirst semiconductor strip protrudes higher than a top surface of thevertical portion to form a semiconductor fin; and a gate stack extendingon a sidewall and a top surface of the semiconductor fin. In anembodiment, the integrated circuit structure further includes adielectric region overlapping the horizontal portion, wherein a topportion of the dielectric region protrudes higher than the top surfaceof the vertical portion to form a dummy dielectric fin, wherein the gatestack further extends on a sidewall and a top surface of the dummydielectric fin. In an embodiment, the dielectric region and thedielectric layer are formed of different dielectric materials. In anembodiment, the integrated circuit structure further includes aninter-layer dielectric overlapping the dummy dielectric fin. In anembodiment, the vertical portion and the horizontal portion have a samethickness. In an embodiment, the integrated circuit structure furtherincludes a second semiconductor strip; and an additional dielectriclayer, wherein the additional dielectric layer is formed of a homogenousdielectric material same as a dielectric material of the dielectriclayer, and wherein the additional dielectric layer is free from seamstherein.

In accordance with some embodiments of the present disclosure, a methodincludes forming a first semiconductor strip; depositing a dielectriclayer comprising silicon oxide, with carbon doped in the silicon oxide,wherein the dielectric layer comprises: a horizontal portion; and avertical portion connected to an end of the horizontal portion, whereinthe vertical portion contacts a sidewall of a lower portion of the firstsemiconductor strip, wherein a top portion of the first semiconductorstrip protrudes higher than a top surface of the vertical portion toform a semiconductor fin; and forming a gate stack extending on asidewall and a top surface of the semiconductor fin. In an embodiment,the method further comprises forming a dielectric region overlapping thehorizontal portion, wherein a top portion of the dielectric regionprotrudes higher than the top surface of the vertical portion to form adummy dielectric fin, wherein the gate stack further extends on asidewall and a top surface of the dummy dielectric fin. In anembodiment, the dielectric region and the dielectric layer are formed ofdifferent dielectric materials. In an embodiment, the method furthercomprises depositing an inter-layer dielectric overlapping the dummydielectric fin. In an embodiment, the dielectric layer is depositedusing a conformal deposition process. In an embodiment, the methodfurther comprises, after the depositing the dielectric layer and beforethe forming the gate stack: performing a low-temperature wet annealprocess at a first temperature; after the low-temperature wet annealprocess, performing a high-temperature wet anneal process at a secondtemperature higher than the first temperature; and after thehigh-temperature wet anneal process, performing a dry anneal processperformed at a third temperature higher than the first temperature.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method comprising: etching a semiconductorsubstrate to form a trench; depositing a dielectric layer using anAtomic Layer Deposition (ALD) cycle, wherein the dielectric layerextends into the trench, and wherein the ALD cycle comprises: pulsingHexachlorodisilane (HCD) to the semiconductor substrate; purging theHCD; pulsing triethylamine to the semiconductor substrate; and purgingthe triethylamine; and performing an anneal process on the dielectriclayer, wherein the anneal process comprises: a first wet anneal processperformed at a first temperature; a second wet anneal process performedat a second temperature higher than the first temperature; and a dryanneal process performed at a third temperature higher than the firsttemperature.
 2. The method of claim 1, wherein the ALD cycle furthercomprises: after the triethylamine is purged, pulsing oxygen (O₂) to thesemiconductor substrate; and purging the oxygen.
 3. The method of claim2 further comprising repeating the ALD cycle that comprising the pulsingoxygen.
 4. The method of claim 1 further comprising repeating the ALDcycle.
 5. The method of claim 1, wherein the first wet anneal process isperformed at the first temperature in a range between about 300° C. andabout 450° C.
 6. The method of claim 1, wherein the second wet annealprocess is performed at the second temperature in a range between about500° C. and about 650° C.
 7. The method of claim 1, wherein the dryanneal process is performed at the third temperature in a range betweenabout 500° C. and about 650° C.
 8. The method of claim 1, wherein theetching the semiconductor substrate further generates a wide trench, andthe trench is a narrow trench narrower than the wide trench, and at atime the anneal process is performed, the narrow trench is fully filled,and the wide trench is partially filled, and a portion of the dielectriclayer in the wide trench is conformal.
 9. A method comprising:depositing a dielectric layer on a semiconductor strip, wherein thedepositing the dielectric layer comprises a cycle, and the cyclecomprises: attaching silicon and chlorine atoms to oxygen atoms on thesemiconductor strip; replacing the chlorine atoms with nitrogen atomsand alkyl groups; and replacing first portions of the nitrogen atoms andalkyl groups with oxygen atoms; removing second portions of the nitrogenatoms and alkyl groups with OH bonds; and annealing the dielectric layerto form Si—O—Si bonds, wherein the annealing the dielectric layercomprises: driving H₂O molecules into the dielectric layer at a firsttemperature; replacing the nitrogen atoms and alkyl groups with oxygenatoms and OH molecules at a second temperature higher than the firsttemperature; and forming the Si—O—Si bonds through a dry anneal process,wherein the dry anneal process is performed at a third temperaturehigher than the first temperature.
 10. The method of claim 9, whereinthe cycle comprises an Atomic Layer Deposition (ALD) cycle, and theattaching silicon and chlorine atoms comprises: pulsingHexachlorodisilane (HCD); and purging the HCD.
 11. The method of claim9, wherein the cycle comprises an Atomic Layer Deposition (ALD) cycle,and the replacing the chlorine atoms comprises: pulsing triethylamine;and purging the triethylamine.
 12. The method of claim 9, wherein thecycle comprises an Atomic Layer Deposition (ALD) cycle, and thereplacing the first portions of the nitrogen atoms and alkyl groupscomprises: pulsing oxygen (O₂); and purging the oxygen.
 13. The methodof claim 9, wherein the dielectric layer is formed in a trench, with thesemiconductor strip being on a side of the trench, and the methodfurther comprises: forming an additional dielectric region, wherein thesemiconductor strip and the additional dielectric region contactopposite sidewalls of a portion of the dielectric layer; etching backthe portion of the dielectric layer, wherein a top portion of thesemiconductor strip forms a semiconductor fin, and a top portion of theadditional dielectric region forms a dummy dielectric fin; and forming agate stack extending on the semiconductor fin and the additionaldielectric region.
 14. The method of claim 9, wherein the dielectriclayer extends into a narrow trench and a wide trench in thesemiconductor substrate, and wherein at a time the annealing thedielectric layer is performed, the narrow trench is fully filled, andthe wide trench is partially filled, and a portion of the dielectriclayer in the wide trench is conformal.
 15. A method comprising: forminga first semiconductor strip; depositing a dielectric layer comprisingsilicon oxide, with carbon doped in the silicon oxide, wherein thedielectric layer comprises: a horizontal portion; and a vertical portionconnected to an end of the horizontal portion, wherein the verticalportion contacts a sidewall of a lower portion of the firstsemiconductor strip, wherein a top portion of the first semiconductorstrip protrudes higher than a top surface of the vertical portion toform a semiconductor fin; and forming a gate stack extending on asidewall and a top surface of the semiconductor fin.
 16. The methodclaim 15 further comprising: forming a dielectric region overlapping thehorizontal portion, wherein a top portion of the dielectric regionprotrudes higher than the top surface of the vertical portion to form adummy dielectric fin, wherein the gate stack further extends on asidewall and a top surface of the dummy dielectric fin.
 17. The methodof claim 16, wherein the dielectric region and the dielectric layer areformed of different dielectric materials.
 18. The method of claim 16further comprising depositing an inter-layer dielectric overlapping thedummy dielectric fin.
 19. The method of claim 15, wherein the dielectriclayer is deposited using a conformal deposition process.
 20. The methodof claim 15 further comprising, after the depositing the dielectriclayer and before the forming the gate stack: performing a first wetanneal process at a first temperature; after the first wet annealprocess, performing a second wet anneal process at a second temperaturehigher than the first temperature; and after the second wet annealprocess, performing a dry anneal process performed at a thirdtemperature higher than the first temperature.